Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs

被引：17

作者：

Sako, Ryutaro ^{[1
]}

Tsuchiya, Hideaki ^{[1
]}

Ogawa, Matsuto ^{[1
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 10期

关键词：

Ballistic transport; band-gap opening; bilayer graphene (BLGs); field-effect transistors (FET); graphene nanoribbons (GNRs); mexican hat structure; TRANSISTORS; FIELD; STATE; EDGE;

D O I：

10.1109/TED.2011.2161992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although a graphene is a zero-gap semiconductor, band-gap energy values up to several hundred millielectronvolts have been introduced by utilizing quantum-mechanical confinement in nanoribbon structures or symmetry breaking between two carbon layers in bilayer graphenes (BLGs). However, the opening of a band gap causes a significant reduction in carrier velocity due to the modulation of band structures in their low-energy spectra. In this paper, we study intrinsic effects of the band-gap opening on ballistic electron transport in graphene nanoribbons (GNRs) and BLGs based on a computational approach, and discuss the ultimate device performances of FETs with those semiconducting graphene channels. We have shown that an increase in the external electric field in BLG-FETs to obtain a larger band-gap energy degrades substantially its electrical characteristics because of deacceleration of electrons due to a Mexican hat structure; therefore, GNR-FETs outperform in principle BLG-FETs.

引用

页码：3300 / 3306

页数：7

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