High-yield molecular borazine precursors for Si-B-N-C ceramics

被引:52
作者
Haberecht, J [1 ]
Krumeich, F [1 ]
Grützmacher, H [1 ]
Nesper, R [1 ]
机构
[1] ETH, Inorgan Chem Lab, CH-8093 Zurich, Switzerland
关键词
D O I
10.1021/cm034832i
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The synthesis of Si-B-N-C ceramic materials can be accomplished via two different routes using B-tris(trichlorosilylvinyl)borazine (2) as starting material. This silyl-functionalized ethinylborazine is obtained by Pt-catalyzed hydrosilylation of B, B', B"-tri-ethynylborazine (1) with HSiCl3 in quantitative yield with a selectivity of 80% beta-substituted product. Amminolysis of 2 with methylamine leads to the soluble silazane polymer P3 which contains intact borazine rings connected by -CH=CH-Si-NMe linkages. In a second approach, the trichlorosilyl. groups of 2 are hydrogenated to yield the B-tris(hydrosilylvinyl)borazine (4). With polymer P3 or 4, a highly durable Si-B-N-C ceramic is obtained after pyrolysis under inert atmosphere. The composition SiBN1+xC2 of the ceramic material corresponds exactly to the backbone of the precursor molecules 2 or 4, and very compact materials are obtained in each case. The ceramic yield of approximately 94% starting from the silane precursor 4 sets a new standard for this type of ceramics using the pyrolysis of a single site molecular precursor. Conductivity measurements show a semiconductor behavior of the ceramic at about 10(2) (Qm)(-1) at room temperature. The composition of the ceramic was characterized by laser-ablation ICP-MS, which was used for that purpose for the first time. The very satisfying results demonstrate the high potential of this direct solid sampling technique.
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页码:418 / 423
页数:6
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