Ferromagnetism in Rh-doped SnO2 from first-principles calculation

被引:15
|
作者
Xiao, W. -Z. [1 ]
Luo, H. [2 ]
Yang, J. -Y. [1 ]
Shuang, D. [1 ]
机构
[1] Hunan Inst Engn, Dept Math & Phys, Xiangtan 411104, Peoples R China
[2] Wenzhou Univ, Dept Phys, Wenzhou 325027, Peoples R China
来源
EUROPEAN PHYSICAL JOURNAL B | 2011年 / 80卷 / 03期
基金
中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; THIN-FILMS; TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTOR; ROOM-TEMPERATURE; PSEUDOPOTENTIALS; DEFECTS;
D O I
10.1140/epjb/e2011-10778-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structures and magnetic properties for Rh-doped SnO2 crystals have been investigated by density functional theory. The results demonstrate a magnetic moment, which mainly arises from d orbital of Rhodium, of 1.0 mu (B) per Rhodium with a little contribution from the Oxygen atoms surrounding it. The Rh-doped SnO2 system exhibits half-metallic ferromagnetism with high Curie temperature. Several doped configurations calculations show that there are some robust ferromagnetic couplings between these local magnetic moments. The p-d hybridization mechanism is responsible for the predicted ferromagnetism. These results suggest a recipe obtaining promising dilute magnetic semiconductor by doping nonmagnetic elements in SnO2 matrix.
引用
收藏
页码:337 / 341
页数:5
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