Thermal contact resistance of different materials between 0.3 K and 4.5 K

被引：5

作者：

Colin, Angel ^{[1
]}

机构：

[1] CSIC UC, Inst Fis Cantabria, Santander 39005, Spain

来源：

CRYOGENICS | 2008年 / 48卷 / 1-2期

关键词：

epoxy (A); heat transfer (C); cryostats (F);

D O I：

10.1016/j.cryogenics.2007.11.001

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The choice of a good bonding agent often depends on the temperature range of use and on its corresponding thermal contact resistance. Measurements obtained between 0.3 K and 4.5 K were made applying the steady state heat flow method across the interfaces of small crystals of quartz (SiO2) sandwiched by two copper blocks and attached with various types of contact materials. Below 1 K, we found that for one crystal attached with indium solder its thermal contact resistance was R-B(-1) approximate to 0.68T(3) W/cm(2)K This value in comparison with those attached with a conductive and an insulating epoxies, turns to be the lowest. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：83 / 85

页数：3

共 6 条

[1] THE LOW TEMPERATURE CHARACTERISTICS OF CARBON-COMPOSITION THERMOMETERS [J].