Theoretical insights into the built-in electric field and band offsets of BN/C heterostructured zigzag nanotubes

被引：21

作者：

Fan, Yingcai ^{[1
]}

Hou, Keyu

Wang, Zhenhai

He, Tao

Zhang, Xuejuan

Zhang, Hongyu

Dong, Jianmin

Liu, Xiangdong

Zhao, Mingwen

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 09期

基金：

中国国家自然科学基金;

关键词：

BORON-NITRIDE NANOTUBES; SEMICONDUCTOR INTERFACES; CARBON NANOTUBES; EMISSION; PSEUDOPOTENTIALS; HETEROJUNCTIONS; SUPERLATTICES; STABILITY; MODEL;

D O I：

10.1088/0022-3727/44/9/095405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We perform first-principles calculations to investigate the band offsets of (9,0) and (10,0) BN/C heterostructured nanotubes with different interfaces. We show that the built-in electric field induced by charge redistribution modulates the band offsets of these nanotubes in different ways. Remarkably enhanced field-emission properties of the heterostructures are also predicted.

引用

页数：6

共 34 条

[1] Stability and electronic structure of BxNyCz nanotubes [J].

Azevedo, S. ;

de Paiva, R. ;

Kaschny, J. R. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (48) :10871-10879

[2] BAND OFFSETS IN LATTICE-MATCHED HETEROJUNCTIONS - A MODEL AND 1ST-PRINCIPLES CALCULATIONS FOR GAAS/ALAS [J].

BALDERESCHI, A ;

BARONI, S ;

RESTA, R .

PHYSICAL REVIEW LETTERS, 1988, 61 (06) :734-737

[3] Dipole correction for surface supercell calculations [J].

Bengtsson, L .

PHYSICAL REVIEW B, 1999, 59 (19) :12301-12304

[4] Band-offset trends in nitride heterojunctions [J].

Binggeli, N ;

Ferrara, P ;

Baldereschi, A .

PHYSICAL REVIEW B, 2001, 63 (24)

[5] Theory of composite BxCyNz nanotube heterojunctions [J].

Blase, X ;

Charlier, JC ;

DeVita, A ;

Car, R .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :197-199

[6] HUGE ELECTRIC-FIELDS IN GE/GAAS (001) AND (111) SUPERLATTICES AND THEIR EFFECT ON INTERFACIAL STABILITY [J].

BYLANDER, DM ;

KLEINMAN, L .

PHYSICAL REVIEW B, 1990, 41 (06) :3509-3512

[7] Itinerant ferromagnetism in heterostructured C/BN nanotubes -: art. no. 125421 [J].

Choi, J ;

Kim, YH ;

Chang, KJ ;

Tománek, D .

PHYSICAL REVIEW B, 2003, 67 (12)

[8]

CHOPRA G, 1995, SCIENCE, V269, P966

[9] STRAIN-INDUCED INTERDIFFUSION AT SEMICONDUCTOR INTERFACES [J].

DANDREA, RG ;

DUKE, CB .

PHYSICAL REVIEW B, 1992, 45 (24) :14065-14068

[10]

Dyke W. P., 1956, ADV ELECT ELECTRON P, V8, P89, DOI DOI 10.1016/S0065-2539(08)61226-3

← 1 2 3 4 →