Ex-Situ Programming in a Neuromorphic Memristor Based Crossbar Circuit

被引：0
作者：
Yakopcic, Chris [1 ]
Taha, Tarek M. [1 ]
机构：
[1] Univ Dayton, Dept Elect & Comp Engn, Dayton, OH 45469 USA
来源：
PROCEEDINGS OF THE 2015 IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON) | 2015年
关键词：
Memristor; neuromorphic; device; SPICE; MODEL;
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
This paper discusses a feedback programming method for a high density crossbar. This programming technique is capable of operating without the use of any transistor or diode isolation at the memristor crosspoints. A series of reads is applied to the crossbar before each write that is able to determine the resistance of each memristor in the crossbar despite the many parallel resistance paths. This is essential because the variation observed in memristor crossbars makes programming very difficult when using just a single write pulse without error checking. The programming method is then used to program a neuromorphic crossbar. Results show successful ex-situ training of a high density crossbar with significant area savings when compared to a one transistor one memristor (1T1M) design. A comparison between different crossbar designs is performed relative to the A-to-D complexity required to program each circuit for a varying device resistance ratio and programming precision.
引用
收藏
页码：300 / 304
页数：5
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