Manipulating Hot-Electron Injection in Metal Oxide Heterojunction Array for Ultrasensitive Surface-Enhanced Raman Scattering

被引:31
作者
Fan, Xingce [1 ]
Wei, Penghua [1 ]
Li, Guoqun [1 ]
Li, Mingze [1 ]
Lan, Leilei [1 ]
Hao, Qi [1 ]
Qiu, Teng [1 ]
机构
[1] Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China
基金
中国国家自然科学基金;
关键词
surface-enhanced Raman scattering; heterojunction array; localized surface plasmon resonance; plasmon-induced charge transfer; direct interfacial charge transfer; photoinduced charge transfer; REMARKABLE SERS ACTIVITY; CHARGE-TRANSFER; NANOPARTICLES; FABRICATION; NANOSHEETS; RESONANCE; SPECTROSCOPY; MOLECULES; SUBSTRATE; SENSORS;
D O I
10.1021/acsami.1c11977
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Efficient photoinduced charge transfer (PICT) resonance is crucial to the surface-enhanced Raman scattering (SERS) performance of metal oxide substrates. Herein, we venture into the hot-electron injection strategy to achieve unprecedented enhanced PICT efficiency between substrates and molecules. A heterojunction array composed of plasmonic MoO2 and semiconducting WO3-x is designed to prove the concept. The plasmonic MoO2 generates intense localized surface plasmon resonance under illumination, which can generate near-field Raman enhancement as well as accompanied plasmon-induced hot-electrons. The hot-electron injection in direct interfacial charge transfer and plasmon-induced charge transfer process can effectively promote the PICT efficiency between substrates and molecules, achieving a record Raman enhancement factor among metal oxide substrates (2.12 x 10(8)) and the ultrasensitive detection of target molecule down to 10(-11) M. This work demonstrates the possibility of hot-electron manipulation to realize unprecedented Raman enhancement in metal oxides, offering a cutting-edge strategy to design high-performance SERS substrates.
引用
收藏
页码:51618 / 51627
页数:10
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