tungsten oxide;
epitaxy;
surface relaxation and reconstruction;
scanning tunneling microscopy;
D O I:
10.1016/S0039-6028(03)00986-5
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Surface reconstructions induced by reducing epitaxial WO3(1 0 0) thin films grown on LaAlO3(1 0 0) were studied using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). When the WO3(1 0 0) surface was annealed in either O-2 or NO2 at 620 K, the surface was predominantly covered by a p(2 x 2) reconstruction with a low density of elongated (1 x 1) islands. Raising the annealing temperature to 800 K reduced the film and the surface was dominated by p(4 x 2) and p(2 x 4) reconstructions, although a few small patches of the p(2 x 2) surface could still be detected. Annealing the p(4 x 2) surface in ultra-high-vacuum (UHV) at 800 K resulted in a (1 x 1) LEED pattern. The STM images of the p(4 x 2) surface were dominated by 0.1 nm deep troughs separating bright rows. The appearance of the rows was sensitive to the imaging bias with a 2x periodicity along the rows seen at high biases and a 1x periodicity at low biases. These results could be explained by a structural model based on incomplete (1 x 1) terraces that form as reduced W5+ ions migrate from the surface into the bulk. (C) 2003 Elsevier B.V. All rights reserved.
机构:
Indian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, IndiaIndian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, India
Yadav, P. V. Karthik
Ajitha, B.
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Vellore Inst Technol VIT, Sch Adv Sci, Div Phys, Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, IndiaIndian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, India
Ajitha, B.
Reddy, Y. Ashok Kumar
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Indian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, IndiaIndian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, India
Reddy, Y. Ashok Kumar
Reddy, Vasudeva Reddy Minnam
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机构:
Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South KoreaIndian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, India
Reddy, Vasudeva Reddy Minnam
Reddeppa, Maddaka
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Chungnam Natl Univ, Dept Phys, Daejeon 34134, South KoreaIndian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, India
Reddeppa, Maddaka
Kim, Moon-Deock
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Chungnam Natl Univ, Dept Phys, Daejeon 34134, South KoreaIndian Inst Informat Technol, Dept Phys, Design & Mfg, Off Vandalur Kelambakkam Rd, Chennai 600127, Tamil Nadu, India
机构:
Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
Bathe, Suvarna R.
Patil, P. S.
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Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
机构:
Laboratoire de Recherche en Matériaux et Micro-spectroscopies Raman et FTIR, Université de Moncton–Campus de Shippagan, E8S 1P6, NBLaboratoire de Recherche en Matériaux et Micro-spectroscopies Raman et FTIR, Université de Moncton–Campus de Shippagan, E8S 1P6, NB
Dong D.
Robichaud J.
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Laboratoire de Recherche en Matériaux et Micro-spectroscopies Raman et FTIR, Université de Moncton–Campus de Shippagan, E8S 1P6, NBLaboratoire de Recherche en Matériaux et Micro-spectroscopies Raman et FTIR, Université de Moncton–Campus de Shippagan, E8S 1P6, NB
Robichaud J.
Djaoued Y.
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Laboratoire de Recherche en Matériaux et Micro-spectroscopies Raman et FTIR, Université de Moncton–Campus de Shippagan, E8S 1P6, NBLaboratoire de Recherche en Matériaux et Micro-spectroscopies Raman et FTIR, Université de Moncton–Campus de Shippagan, E8S 1P6, NB