The p(4 x 2) surface reconstruction on epitaxial WO3 thin films

被引:23
|
作者
Li, M
Altman, EI
Posadas, A
Ahn, CH
机构
[1] Yale Univ, Dept Chem Engn, New Haven, CT 06520 USA
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
关键词
tungsten oxide; epitaxy; surface relaxation and reconstruction; scanning tunneling microscopy;
D O I
10.1016/S0039-6028(03)00986-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surface reconstructions induced by reducing epitaxial WO3(1 0 0) thin films grown on LaAlO3(1 0 0) were studied using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). When the WO3(1 0 0) surface was annealed in either O-2 or NO2 at 620 K, the surface was predominantly covered by a p(2 x 2) reconstruction with a low density of elongated (1 x 1) islands. Raising the annealing temperature to 800 K reduced the film and the surface was dominated by p(4 x 2) and p(2 x 4) reconstructions, although a few small patches of the p(2 x 2) surface could still be detected. Annealing the p(4 x 2) surface in ultra-high-vacuum (UHV) at 800 K resulted in a (1 x 1) LEED pattern. The STM images of the p(4 x 2) surface were dominated by 0.1 nm deep troughs separating bright rows. The appearance of the rows was sensitive to the imaging bias with a 2x periodicity along the rows seen at high biases and a 1x periodicity at low biases. These results could be explained by a structural model based on incomplete (1 x 1) terraces that form as reduced W5+ ions migrate from the surface into the bulk. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:22 / 32
页数:11
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