SiGe nanostructures with self-assembled islands for Si-based optoelectronics

被引：35
|
作者：
Krasilnik, Z. F. [1 ]
Novikov, A. V. [1 ]
Lobanov, D. N. [1 ]
Kudryavtsev, K. E. [1 ]
Antonov, A. V. [1 ]
Obolenskiy, S. V. [2 ]
Zakharov, N. D. [3 ]
Werner, P. [3 ]
机构：
[1] Inst Phys Microstruct RAS, Nizhnii Novgorod 603950, Russia
[2] Nizhnii Novgorod State Univ, Nizhnii Novgorod 603950, Russia
[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期
关键词：
ENHANCED RADIATION HARDNESS; CHEMICAL-VAPOR-DEPOSITION; LIGHT-EMITTING-DIODES; QUANTUM DOTS; MU-M; STRUCTURAL-PROPERTIES; GE/SI(100) ISLANDS; ELECTROLUMINESCENCE; LUMINESCENCE; PHOTOLUMINESCENCE;
D O I：
10.1088/0268-1242/26/1/014029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of structure parameters on the electroluminescence and photoconductivity of multilayer structures with self-assembled Ge(Si)/Si(0 0 1) islands has been studied. The highest intensity of the room-temperature electroluminescence in the wavelength range of 1.3-1.55 mu m has been observed for the islands grown at 600 degrees C. The same diode structures with Ge(Si)/Si(0 0 1) islands have demonstrated room-temperature photoconductivity signals in the wavelength range of 1.3-1.55 mu m. The observed overlap of the electroluminescence and photoconductivity spectra obtained for the same structures with Ge(Si) islands makes these structures a promising material for the fabrication of a Si-based optocoupler. Less degradation after neutron irradiation has been observed for the electroluminescence and photoconductivity signals from multilayer structures with Ge(Si) self-assembled islands in comparison with bulk silicon structures. This result is associated with more effective confinement of charge carriers in the multilayer structures with Ge(Si) islands.
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页数：5
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