SiGe nanostructures with self-assembled islands for Si-based optoelectronics

被引：36

作者：

Krasilnik, Z. F. ^{[1
]}

Novikov, A. V. ^{[1
]}

Lobanov, D. N. ^{[1
]}

Kudryavtsev, K. E. ^{[1
]}

Antonov, A. V. ^{[1
]}

Obolenskiy, S. V. ^{[2
]}

Zakharov, N. D. ^{[3
]}

Werner, P. ^{[3
]}

机构：

[1] Inst Phys Microstruct RAS, Nizhnii Novgorod 603950, Russia

[2] Nizhnii Novgorod State Univ, Nizhnii Novgorod 603950, Russia

[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期

关键词：

ENHANCED RADIATION HARDNESS; CHEMICAL-VAPOR-DEPOSITION; LIGHT-EMITTING-DIODES; QUANTUM DOTS; MU-M; STRUCTURAL-PROPERTIES; GE/SI(100) ISLANDS; ELECTROLUMINESCENCE; LUMINESCENCE; PHOTOLUMINESCENCE;

D O I：

10.1088/0268-1242/26/1/014029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of structure parameters on the electroluminescence and photoconductivity of multilayer structures with self-assembled Ge(Si)/Si(0 0 1) islands has been studied. The highest intensity of the room-temperature electroluminescence in the wavelength range of 1.3-1.55 mu m has been observed for the islands grown at 600 degrees C. The same diode structures with Ge(Si)/Si(0 0 1) islands have demonstrated room-temperature photoconductivity signals in the wavelength range of 1.3-1.55 mu m. The observed overlap of the electroluminescence and photoconductivity spectra obtained for the same structures with Ge(Si) islands makes these structures a promising material for the fabrication of a Si-based optocoupler. Less degradation after neutron irradiation has been observed for the electroluminescence and photoconductivity signals from multilayer structures with Ge(Si) self-assembled islands in comparison with bulk silicon structures. This result is associated with more effective confinement of charge carriers in the multilayer structures with Ge(Si) islands.

引用

页数：5

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