Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As

被引：14

作者：

Shen, A

Ohno, H ^{[1
]}

Matsukura, F

Liu, HC

Akiba, N

Sugawara, Y

Kuroiwa, T

Ohno, Y

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICA B-CONDENSED MATTER | 1998年 / 249卷

基金：

日本学术振兴会;

关键词：

superlattices; resonant tunneling; (Ga; Mn)As; ferromagnetism; ferromagnetic semiconductor;

D O I：

10.1016/S0921-4526(98)00319-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：809 / 813

页数：5

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