Wurtzite ZnTe Nanotrees and Nanowires on Fluorine-Doped Tin Oxide Glass Substrates

被引:11
|
作者
Song, Man Suk [1 ]
Choi, Seon Bin [1 ]
Kim, Yong [1 ]
机构
[1] Dong A Univ, Dept Phys, Hadan 2 Dong, Busan 49315, South Korea
基金
新加坡国家研究基金会;
关键词
ZnTe; nanowires; Sn catalysts; wurtzite; zinc blende; microphotoluminescence; band gap; ZINC-BLENDE; GROWTH; ZNS; GAAS; PHOTOLUMINESCENCE; NANOSTRUCTURES; DEPENDENCE; MORPHOLOGY; NANOBELTS; NANORODS;
D O I
10.1021/acs.nanolett.7b01446
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
ZnTe nanotrees and nanowires were grown on fluorine-doped tin oxide glass by physical vapor transport. Sn from a fluorine-doped tin oxide layer catalyzed the growth at a growth temperature of 320 degrees C. Both the stem and branch nanowires grew along < 0001 > in the rarely observed wurtzite structure. SnTe nanostructures were formed in the liquid catalyst and simultaneously ZnTe nanowire grew under Te-limited conditions, which made the formation of the wurtzite structure energetically favorable. Through polarization-dependent and power-dependent microphotoluminescence measurements from individual wurtzite nanowires at room temperature, we could determine the so far unknown fundamental bandgap of wurtzite ZnTe, which was 2.297 eV and thus 37 meV higher than that of zinc-blend ZnTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands is estimated to be 69 meV.
引用
收藏
页码:4365 / 4372
页数:8
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