Electrosynthesis and Characterization of Poly(3,4-ethylenedioxythiophene) Nanowires

被引:0
作者
del Valle, M. A. [1 ]
Hernandez, L. A. [1 ]
Diaz, F. R. [1 ]
Ramos, A. [1 ]
机构
[1] Pontificia Univ Catolica Chile, Fac Quim, Dept Quim Inorgan, LEP, Santiago 7820436, Chile
来源
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE | 2015年 / 10卷 / 06期
关键词
poly(3,4-ethylenedioxythiophene); electropolymerization; template; modified electrodes; electrosynthesis of nanowires; poly(3,4-ethylenedioxythiophene) nanowires; GROWTH MECHANISMS; CONDUCTING POLYMERS; NUCLEATION; POLYTHIOPHENE; FILMS; NANOTUBES; TRANSPORT; ACID; ELECTROPOLYMERIZATION; NANOSTRUCTURES;
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Using the methodology previously reported for the obtaining of polythiophene by electrochemical methods, on a silica template modified Pt electrode, that tunes the growth into its pores confined space, in the current paper poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires, also obtained directly on the electrode surface, were prepared. The Pt electrode was first modified by potentiostatic deposition of a thin layer of PEDOT. Upon this modified electrode a porous silica film was electrodeposited to serve as template for polymeric nanowires preparation. The modification to the previously reported methodology for polythiophene consists just in the pre-coating of a PEDOT thin film on the bare Pt. Thus, it has been successfully confirmed the validity and usefulness of the proposed methodology, obtaining PEDOT nanowires of diameters between 3 and 7 nm. It was also verified an innovative strategy to establish the time required for the deposit growth takes place only into the template confined space, without exceeding the length of the pore, providing thus a route that allows obtaining polymeric nanowires using solely electrochemical methods, with the advantages that the structures with this type of morphology present and, in addition, deposited directly on the electrode, result that has been achieved so far only with metal deposits.
引用
收藏
页码:5152 / 5163
页数:12
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