Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy

被引：15

作者：

Chen, Shih-Chen ^{[1
]}

Liao, Yu-Kuang ^{[1
,5
]}

Chen, Hsueh-Ju ^{[1
]}

Chen, Chia-Hsiang ^{[4
]}

Lai, Chih-Huang ^{[4
]}

Chueh, Yu-Lun ^{[4
]}

Kuo, Hao-Chung ^{[2
,3
]}

Wu, Kaung-Hsiung ^{[1
]}

Juang, Jenh-Yih ^{[1
]}

Cheng, Shun-Jen ^{[1
]}

Hsieh, Tung-Po ^{[5
]}

Kobayashi, Takayoshi ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[4] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[5] Ind Technol Res Inst, Green Energy & Environm Res Labs, Next Generat Solar Cell Div, Compound Semicond Solar Cell Dept, Hsinchu, Taiwan

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 12期

关键词：

DENSITY-DEPENDENCE; SOLAR-CELLS; RECOMBINATION; SCATTERING; EFFICIENCY; GAAS;

D O I：

10.1364/OE.20.012675

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ultrafast carrier dynamics in Cu(In,Ga)Se-2 films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed. The lifetime of defect-related recombination in the co-evaporated CIGS films is much longer than that in the direct-sputtered CIGS films, reflecting a better quality with higher energy conversion efficiency of the former. (c) 2012 Optical Society of America

引用

页码：12675 / 12681

页数：7

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