Flexible Low-Voltage IGZO Thin-Film Transistors With Polymer Electret Gate Dielectrics on Paper Substrates

被引：21

作者：

Wang, Xiangyu ^{[1
]}

Gao, Ya ^{[1
]}

Liu, Zehua ^{[1
]}

Luo, Jie ^{[1
]}

Wan, Qing ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

Flexible thin film transistors; polymer electrets; paper electronics; FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; OXIDE;

D O I：

10.1109/LED.2018.2888477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polymer electret shows a good electrostatic polarization effect, resulting in very high-density charge accumulation in semiconducting channel layer at low gate voltage. In this letter, graphene oxide enhanced poly(vinyl alcohol) film was used as the gate dielectric for flexible low-voltage indium-gallium-zinc-oxide thin-film transistors (TFTs) on paper substrates. High performance with a high current ON/OFF ratio of similar to 1.8 x 10(7), a large field-effect mobility of similar to 42 cm(2) V-1 s(-1), and a low subthreshold swing of 106 mV/decade was obtained. In addition, such flexible TFTs exhibit a good stability under bending condition due to the reinforcement effect of graphene oxide. Such flexible TFTs on paper substrates have potential application in next-generation low-cost flexible paper electronics.

引用

页码：224 / 227

页数：4

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