Electrical and photoelectrical properties of photosensitive heterojunctions n-TiO2/p-CdTe

被引：48

作者：

Brus, V. V. ^{[1
]}

Ilashchuk, M. I. ^{[2
]}

Kovalyuk, Z. D. ^{[1
]}

Maryanchuk, P. D. ^{[2
]}

Ulyanytsky, K. S. ^{[2
]}

机构：

[1] NAS Ukraine, Frantsevich Inst Problems Mat Sci, Chernivtsi Branch, UA-58001 Chernovtsy, Ukraine

[2] Yuriy Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 12期

关键词：

SOLAR-CELLS; CHARGE-TRANSPORT; CDTE; EFFICIENCY; MECHANISMS; ABSORBER; CONTACTS;

D O I：

10.1088/0268-1242/26/12/125006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photosensitive heterojunctions n-TiO2/p-CdTe were fabricated by dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-CdTe single-crystal substrates (1 1 0). Their electrical properties were investigated and the dominating current mechanisms were analyzed at forward and reverse biases in the scope of the tunnel-recombination and emission-recombination models. The obtained surface-barrier structures n-TiO2/p-CdTe possessed the following photoelectrical parameters under 100 mW cm(-2) illumination: the open-circuit voltage V-oc = 0.69 V, the short-circuit current I-sc = 6 mA cm(-2) and the fill factor FF = 0.42.

引用

页数：6

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