Piezoelectric materials for high power, high temperature applications

被引：229
|
作者：
Zhang, SJ [1 ]
Xia, R
Lebrun, L
Anderson, D
Shrout, TR
机构：
[1] Penn State Univ, Inst Mat Res, University Pk, PA 16802 USA
[2] Inst Natl Sci Appl, Lab Genie Elect & Ferroelect, F-69621 Villeurbanne, France
[3] TRS Ceram, State Coll, PA 16801 USA
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 27期
基金：
美国国家卫生研究院;
关键词：
high power; PSNT; piezoelectric; high temperature; hard material;
D O I：
10.1016/j.matlet.2005.06.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High intensity focused ultrasound (HIFU) and ultra sound-guided HIFU therapy require probes capable of both high quality diagnostic imaging and radiating high acoustic power into tissue. Piezoelectric materials with high mechanical quality factor Q, large electromechanical coupling (k(ij)) and high dielectric constant K-T are desired to meet the demands of advanced high power electromechanical applications. In addition, a high Curie temperature is desired because of wider temperature usage and improved temperature stability. Previous investigations have shown that Q or k(ij) and K-T can be enhanced only at the expense of each other. Also materials with higher Curie temperature were found to possess lower dielectric and piezoelectric performance. Therefore, modified piezoelectric materials (including polycrystalline and single crystals) were reviewed as a function of Curie temperature. Optimization of performance was exemplified with Pb(Sc1/2Nb1/2)O-3-PbTiO3 (PSNT) compositions close to the morphotropic phase boundary (MPB) and the effect of manganese additions on Q, coupling k(33) and K-T, respectively. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：3471 / 3475
页数：5
相关论文
共 50 条
  • [41] GaN and related materials for high power applications
    Shur, MS
    POWER SEMICONDUCTOR MATERIALS AND DEVICES, 1998, 483 : 15 - 26
  • [42] Evaluation method for high-power piezoelectric materials and devices
    Morita, Takeshi
    2018 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 2018,
  • [43] Advanced ceramic materials for high temperature applications
    Belmonte, Manuel
    ADVANCED ENGINEERING MATERIALS, 2006, 8 (08) : 693 - 703
  • [44] Assembly materials for high-temperature applications
    Trodler, Jörg
    SMT Surface Mount Technology Magazine, 2014, 29 (03): : 60 - 72
  • [45] Magnetic nanocomposite materials for high temperature applications
    Johnson, F
    Hsaio, A
    Ashe, C
    Laughlin, D
    Lambeth, D
    McHenry, ME
    Varga, LK
    PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY, 2001, : 1 - 6
  • [46] Platinum materials for high-temperature applications
    Drost, E
    Golitzer, H
    Poniatowski, M
    Zeuner, S
    METALL, 1996, 50 (7-8): : 492 - 498
  • [47] Polymer nanostructured materials for high temperature applications
    Koo, JH
    Pilato, LA
    SAMPE JOURNAL, 2005, 41 (02) : 7 - 19
  • [48] Improved laser diode for high power and high temperature applications
    Schroeder, D.
    Schroeder, M.
    Werner, E.
    Meusel, J.
    Lorenzen, D.
    Hennig, P.
    Huelsewede, R.
    Sebastian, J.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII, 2009, 7198
  • [49] High temperature, high power density packaging for automotive applications
    Gerber, M
    Ferreira, JA
    Hofsajer, IW
    Seliger, N
    PESC'03: 2003 IEEE 34TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-4, CONFERENCE PROCEEDINGS, 2003, : 425 - 430
  • [50] Silicon carbide devices for high power high temperature applications
    Johnson, M
    ELECTRONIC ENGINEERING, 1997, 69 (852): : 47 - 48
12345