Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

被引：31

作者：

Hodges, C. ^{[1
]}

Killat, N. ^{[1
]}

Kaun, S. W. ^{[2
]}

Wong, M. H. ^{[2
]}

Gao, F. ^{[3
]}

Palacios, T. ^{[3
]}

Mishra, U. K. ^{[4
]}

Speck, J. S. ^{[2
]}

Wolverson, D. ^{[5
]}

Kuball, M. ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[5] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTROLUMINESCENCE CHARACTERIZATION; HEMTS; RELIABILITY;

D O I：

10.1063/1.3693427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693427]

引用

页数：4

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