Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors

被引：3
作者：
Kimura, Mutsumi [1 ,2 ]
Taya, Jun [1 ]
Nakashima, Akihiro [1 ]
机构：
[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
[2] Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan
来源：
SOLID-STATE ELECTRONICS | 2012年 / 72卷
关键词：
Excimer-laser crystallization (ELC); Solid-phase crystallization (SPC); Poly-Si; Thin-film transistor (TFT); RECOMBINATION MODEL; SILICON; TFTS; DISPLAY;
D O I：
10.1016/j.sse.2012.02.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have compared transistor characteristics between excimer-laser crystallized (ELC) and solid-phase crystallized (SPC) poly-Si thin-film transistors (TFTs). First, off characteristic and characteristic parameters, such as the subthreshold swing and field-effect mobility, of the ELC TFT are superior to those of the SPC TFT, which indicates that the trap states in the ELC TFT are fewer than those in the SPC TFT. Next, the activation energy (Ea) for the on characteristic of the ELC TFT is larger than that of the SPC TFT, which originates from the difference of the grain structures. Moreover. Ea for the off characteristic of the ELC TFT is much larger than that of the SPC TFT, which is caused by the difference of the trap distribution. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：52 / 55
页数：4
相关论文
共 50 条
  • [21] CHARACTERIZATION OF LOW-TEMPERATURE POLY-SI THIN-FILM TRANSISTORS
    BROTHERTON, SD
    AYRES, JR
    YOUNG, ND
    [J]. SOLID-STATE ELECTRONICS, 1991, 34 (07) : 671 - 679
  • [22] Channel Width Splitting Effect on Driving Characteristics of Silicide Seed-Induced Laterally Crystallized Poly-Si Thin-Film Transistors
    Byun, Chang-Woo
    Reddy, A. Mallikarjuna
    Son, Se Wan
    Lee, Yong Woo
    Joo, Seung Ki
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (04) : 1390 - 1396
  • [23] Artificial Neural Networks using Poly-Si Thin-Film Transistors
    Sugisaki, Sumio
    Morita, Ryohei
    Yamaguchi, Yuki
    Matsuda, Tokiyoshi
    Kimura, Mutsumi
    [J]. 2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2016, : 76 - 77
  • [24] Wireless Power Supply to Artificial Retina using Poly-Si Thin-Film Transistor
    Yamamoto, Yuki
    Ishizaki, Toshio
    Matsuda, Tokiyoshi
    Kimura, Mutsumi
    [J]. 2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2016, : 50 - 51
  • [25] Multichannel poly-si thin-film transistors prepared by excimer laser annealing with channel width comparable or smaller than the grain size
    Yang, Po-Chuan
    Kuo, Ping-Sheng
    Lee, Si-Chen
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 2129 - 2133
  • [26] Dependence of off-leakage current on channel film quality in poly-Si thin-film transistors and analysis using device simulation
    Kimura, Mutsumi
    Dimitriadis, Charalambos
    [J]. SOLID-STATE ELECTRONICS, 2011, 57 (01) : 87 - 89
  • [27] Hysteresis Characteristics in Low Temperature Poly-Si Thin Film Transistors
    Chung, Hoon-Ju
    Kim, Dae-Hwan
    Kim, Byeong-Koo
    [J]. JOURNAL OF INFORMATION DISPLAY, 2005, 6 (04) : 6 - 10
  • [28] Thin-BOX Poly-Si Thin-Film Transistors for CMOS-Compatible Analog Operations
    Kim, Soo Youn
    Baytok, Selin
    Roy, Kaushik
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (06) : 1687 - 1695
  • [29] Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon
    Oh, J. H.
    Ahn, K. W.
    Kang, D. H.
    Park, W. H.
    Jang, J.
    Chang, Y. J.
    Choi, J. B.
    Min, H. K.
    Kim, C. W.
    [J]. SOLID-STATE ELECTRONICS, 2008, 52 (03) : 482 - 486
  • [30] The influence of base doping density on the performance of evaporated poly-Si thin-film solar cells by solid-phase epitaxy
    He, Song
    Janssens, Joachim
    Wong, Johnson
    Sproul, Alistair B.
    [J]. THIN SOLID FILMS, 2010, 519 (01) : 475 - 478
12345