Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors

被引：3

作者：

Kimura, Mutsumi ^{[1
,2
]}

Taya, Jun ^{[1
]}

Nakashima, Akihiro ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan

来源：

SOLID-STATE ELECTRONICS | 2012年 / 72卷

关键词：

Excimer-laser crystallization (ELC); Solid-phase crystallization (SPC); Poly-Si; Thin-film transistor (TFT); RECOMBINATION MODEL; SILICON; TFTS; DISPLAY;

D O I：

10.1016/j.sse.2012.02.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have compared transistor characteristics between excimer-laser crystallized (ELC) and solid-phase crystallized (SPC) poly-Si thin-film transistors (TFTs). First, off characteristic and characteristic parameters, such as the subthreshold swing and field-effect mobility, of the ELC TFT are superior to those of the SPC TFT, which indicates that the trap states in the ELC TFT are fewer than those in the SPC TFT. Next, the activation energy (Ea) for the on characteristic of the ELC TFT is larger than that of the SPC TFT, which originates from the difference of the grain structures. Moreover. Ea for the off characteristic of the ELC TFT is much larger than that of the SPC TFT, which is caused by the difference of the trap distribution. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：52 / 55

页数：4

共 18 条

[1]

Aoki Y., 2009, 16 INT DISPL WORKSH, P239

[2]

Boer W.D., 2005, Active Matrix Liquid Crystal Displays

[3] A NEW RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING TUNNELING [J].

HURKX, GAM ;

KLAASSEN, DBM ;

KNUVERS, MPG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :331-338

[4] High-resolution microencapsulated electrophoretic display (EPD) driven by poly-Si TFTs with four-level grayscale [J].

Inoue, S ;

Kawai, H ;

Kanbe, S ;

Saeki, T ;

Shimoda, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) :1532-1539

[5]

Inoue S., 1991, 1991 INT EL DEV M, P555

[6] High-performance polycrystalline silicon thin-film transistors fabricated by high-temperature process with excimer laser annealing [J].

Jiroku, H ;

Miyasaka, M ;

Inoue, S ;

Tsunekawa, Y ;

Shimoda, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6A) :3293-3296

[7]

Karaki N., 2005, 2005 IEEE International Solid-State Circuits Conference (IEEE Cat. No. 05CH37636), P272

[8] Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display [J].

Kimura, M ;

Yudasaka, I ;

Kanbe, S ;

Kobayashi, H ;

Kiguchi, H ;

Seki, S ;

Miyashita, S ;

Shimoda, T ;

Ozawa, T ;

Kitawada, K ;

Nakazawa, T ;

Miyazawa, W ;

Ohshima, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (12) :2282-2288

[9]

Kimura M., 2009, 9 INT M INF DISPL IM, P957

[10] Mechanism Analysis of Off-Leakage Current in Poly-Si TFTs with LDD Structure [J].

Kimura, Mutsumi ;

Nakashima, Akihiro ;

Sagawa, Yuki .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) :H409-H411

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