Effect of Cu content on the photovoltaic properties of wide bandgap CIGS thin-film solar cells prepared by single-stage process

被引：14

作者：

Saifullah, Muhammad ^{[1
,2
]}

Moon, Ji Hyun ^{[2
,3
]}

Ahn, SeJin ^{[1
,2
]}

Gwak, Jihye ^{[1
,2
]}

Ahn, Seungkyu ^{[2
]}

Kim, Kihwan ^{[2
]}

Eo, Young Joo ^{[1
,2
]}

Yun, Jae Ho ^{[1
,2
]}

机构：

[1] Univ Sci & Technol, Daejeon, South Korea

[2] Korea Inst Energy Res, Photovolta Lab, Daejeon, South Korea

[3] Chungnam Natl Univ, Daejeon, South Korea

来源：

CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 11期

关键词：

CIGS; Wide bandgap; Cu/(Ga plus In) ratio; DLCP; Free carrier concentration; Bulk defect concentration; ELECTRICAL-PROPERTIES; DEFECTS;

D O I：

10.1016/j.cap.2016.08.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A solar cell based on Cu(In1-x,Ga-x)Se-2 (CIGS) with bandgap (E-g) of 1.5 eV is superior because of the low coefficient of power loss and resistive losses. CIGS thin-films with the E-g = 1.5 eV and Cu/(Ga + In) (CGI) ratios of 0.92, 0.84, and 0.78 were deposited in this study using single-stage process. Photovoltaic (PV) parameters of the solar cell ameliorated on raising CGI values from 0.78 to 0.84, but abruptly deteriorated on further increasing the CGI value to 0.92. The PV properties of CIGS solar cell with CGI = 0.92 were poor due to the high defect density and low shunt resistance. The optimal CGI range for making efficient wide gap CIGS solar cells through the single-stage process was found to be from -0.80 to 0.84. The best CIGS solar cell with CGI value of 0.84 exhibited the conversion efficiency of 11.00%. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1517 / 1522

页数：6

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