Growth and characterization of codoping of ZnSe: Cl with Li grown by molecular beam epitaxy on GaAs

被引：4
作者：
Yoneta, M
Uechi, H
Nanami, K
Ohishi, M
Saito, H
Yoshino, K
Ohmori, K
机构：
[1] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan
[2] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
来源：
PHYSICA B | 2001年 / 302卷
关键词：
MBE; codoping; alternative-doping; PL; C-V;
D O I：
10.1016/S0921-4526(01)00423-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Codoping with Li and Cl of ZnSe grown on GnAs(0 0 1) substrate by using molecular beam epitaxy has been investigated. Complex formation between Li and Cl atoms by codoping has been demonstrated by photoluminescence measurements. A new approach to codoping in ZnSe, which involves Li and Cl deposition alternatively without spatially separated atomic planes (alternative-doping). has been attempted to obtain higher carrier concentration than that achieved by uniform-doping technique, and indeed confirmed the effectiveness of codoping. The growth rate of codoped ZnSe films was larger than that of ZnSe layer doped with Cl alone. and the electrical conductivity changed from n-type to p-type. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：166 / 171
页数：6
相关论文
共 17 条
  • [1] CHARACTERIZATION OF P-TYPE ZNSE
    HAASE, MA
    CHENG, H
    DEPUYDT, JM
    POTTS, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 448 - 452
  • [2] p-type electrical conduction in ZnO thin films by Ga and N codoping
    Joseph, M
    Tabata, H
    Kawai, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A): : L1205 - L1207
  • [3] Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a delta-doping technique
    Jung, HD
    Song, CD
    Wang, SQ
    Arai, K
    Wu, YH
    Zhu, Z
    Yao, T
    KatayamaYoshida, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1143 - 1145
  • [4] KatayamaYoshida H, 1997, PHYS STATUS SOLIDI B, V202, P763, DOI 10.1002/1521-3951(199708)202:2<763::AID-PSSB763>3.0.CO
  • [5] 2-C
  • [6] Effect and comparison of co-doping of Ag, Ag plus In, and Ag+Clin ZnS:N/GaAs layers prepared by vapor-phase epitaxy
    Kishimoto, S
    Hasegawa, T
    Kinto, H
    Matsumoto, O
    Iida, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 556 - 561
  • [7] On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy
    Ohishi, M
    Yoneta, M
    Ishii, S
    Ohura, M
    Hiroe, Y
    Saito, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 376 - 379
  • [8] CHARACTERISTICS OF CL-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    OHKAWA, K
    MITSUYU, T
    YAMAZAKI, O
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3216 - 3221
  • [9] CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING
    OHKAWA, K
    KARASAWA, T
    MITSUYU, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A): : L152 - L155
  • [10] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY
    QIU, J
    DEPUYDT, JM
    CHENG, H
    HAASE, MA
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2992 - 2994
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