Microscopic observation of precursor-mediated adsorption process of NH3 on Si(100)c(4x2) using STM -: art. no. 235322

被引：39

作者：

Hossain, MZ ^{[1
]}

Yamashita, Y ^{[1
]}

Mukai, K ^{[1
]}

Yoshinobu, J ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778521, Japan

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.68.235322

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Adsorption process of NH3 on Si(100)c(4x2) has been studied using scanning tunneling microscopy (STM) at 65 K. The dissociated species of NH3 are adsorbed on the same dimer, since the depression on a dimer site is observed in the STM image. A small amount of molecular precursor species of NH3 are observed as bright protrusions. The precursor species undergo dissociative chemisorption upon interaction with another mobile molecule, resulting in the depression on two adjacent dimers. The reactivity of the dimer adjacent to the already reacted dimer is largely enhanced resulting in the formation of two-dimensional islands of dissociated species. The C defect is found to be an active site for the dissociation of NH3.

引用

页数：5

共 29 条

[1]

[Anonymous], SILICON NITRIDE ELEC

[2] MOLECULAR-BEAM STUDIES OF GAS-SURFACE COLLISION DYNAMICS [J].

ARUMAINAYAGAM, CR ;

MADIX, RJ .

PROGRESS IN SURFACE SCIENCE, 1991, 38 (01) :1-102

[3] STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION [J].

AVOURIS, P ;

CAHILL, DG .

ULTRAMICROSCOPY, 1992, 42 :838-844

[4]

BISCHOFF JL, 1991, SURF SCI, V248, pL270

[5] REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW LETTERS, 1986, 57 (09) :1185-1188

[6] PHOTOEMISSION-STUDIES OF THE REACTIONS OF AMMONIA AND N-ATOMS WITH SI(100)-(2X1) AND SI(111)-(7X7) SURFACES [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW B, 1988, 38 (06) :3937-3942

[7] Isolation of an intrinsic precursor to molecular chemisorption [J].

Brown, DE ;

Moffatt, DJ ;

Wolkow, RA .

SCIENCE, 1998, 279 (5350) :542-544

[8] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47

[9] THE ADSORPTION AND DECOMPOSITION OF NH3 ON SI(100) - DETECTION OF THE NH2(A) SPECIES [J].

DRESSER, MJ ;

TAYLOR, PA ;

WALLACE, RM ;

CHOYKE, WJ ;

YATES, JT .

SURFACE SCIENCE, 1989, 218 (01) :75-107

[10] Ab initio structure and energetics for the molecular and dissociative adsorption of NH3 on Si(100)-2 x 1 [J].

Fattal, E ;

Radeke, MR ;

Reynolds, G ;

Carter, EA .

JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (43) :8658-8661

← 1 2 3 →