Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities

被引：9

作者：

Rickert, L. ^{[1
]}

Fritsch, B. ^{[1
]}

Kors, A. ^{[1
]}

Reithmaier, J. P. ^{[1
]}

Benyoucef, M. ^{[1
]}

机构：

[1] Univ Kassel, Ctr Interdisciplinary Nanostruct Sci & Technol CI, Inst Nanostruct Technol & Analyt INA, Heinrich Plett Str 40, D-34132 Kassel, Germany

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 31期

关键词：

photonic crystal; telecom wavelength; quantum dots; spectroscopy; SINGLE QUANTUM-DOT; NANOCAVITIES; VISUALIZATION;

D O I：

10.1088/1361-6528/ab8a8c

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 10(6), while the M1 mode volume is found to be 0.33 x (lambda/n)(3), which is less than half the value of the M1 mode volume of a comparable L3 cavity. Low-temperature micro-photoluminescence measurements revealed experimental M1 Q-factor values on the order of 10(4) with emission wavelengths around 1.55 mu m. Weak coupling behavior of the QD exciton line and the M1 ground mode was achieved via temperature-tuning experiments.

引用

页数：5

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