Ion beam and electrical conductivity analysis of nanocrystalline alpha-BN and alpha-Al2O3 ceramics implanted with Ti+n ions and annealed

被引:3
作者
Duvanov, SM
Kabyshev, AV
Kobzev, AP
机构
[1] HIGH VOLTAGE INST, TOMSK 634050, RUSSIA
[2] JOINT INST NUCL RES, FRANK LAB NEUTRON PHYS, DUBNA 141980, MOSCOW REGION, RUSSIA
来源
MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES | 1997年 / 248-2卷
关键词
ceramics; pulsed ion implantation; thermal annealing; ion beam analysis; electrical conductivity analysis;
D O I
10.4028/www.scientific.net/MSF.248-249.271
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
RBS, ERD, resonant elastic Backscattering Spectrometry of H-1(+) and He-4(+) ions, electrical resistivity analysis were used to study properties of near-surface layers of modified nanocrystalline alpha-BN and alpha-Al2O3 ceramics. High-fluence and high-flux pulse implantation of Ti+n ions and post-implantation thermal annealing in vacuum were utilised for modification of the ceramics. As a result of implantation and subsequent annealing, thermally stable (up to 1600 K) low electrical conductive surface coatings were formed. Observed changes in elements depth profiles and in surface electrical resistivity of these coatings as a result of the post-implantation thermal treatment are discussed in connection with temperature evolution of the damage microstructure.
引用
收藏
页码:271 / 277
页数:7
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