Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell

被引：9

作者：

Elborg, Martin ^{[1
,2
]}

Jo, Masafumi ^{[1
]}

Ding, Yi ^{[1
]}

Noda, Takeshi ^{[1
]}

Mano, Takaaki ^{[1
]}

Sakoda, Kazuaki ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 06期

关键词：

MOLECULAR-BEAM EPITAXY; GAASN/GAAS EPILAYERS; PHOTOLUMINESCENCE; TEMPERATURE; EFFICIENCY; LAYERS;

D O I：

10.1143/JJAP.51.06FF15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an efficient two-color photoexcitation process in a GaNAs/AlGaAs multiple quantum well (MQW) solar cell. The introduction of N into the GaAs MQW induces a marked reduction in bandgap energy, forming a large conduction band offset, and the formation of localized states. Owning to this deep confinement, the thermal escape of photogenerated carriers from the QWs is greatly suppressed even at room temperature, resulting in a reduction in photocurrent. An additional photocurrent is generated by a two-color absorption process of sub-bandgap photons. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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