Playing with Dimensions: Rational Design for Heteroepitaxial p-n Junctions

被引：29

作者：

Lee, Tae Il ^{[1
]}

Lee, Sang Hoon ^{[1
]}

Kim, Young-Dong ^{[1
]}

Jang, Woo Soon ^{[1
]}

Oh, Jin Young ^{[1
]}

Baik, Hong Koo ^{[1
]}

Stampfl, Catherine ^{[2
]}

Soon, Aloysius ^{[1
]}

Myoung, Jae Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

来源：

NANO LETTERS | 2012年 / 12卷 / 01期

基金：

新加坡国家研究基金会; 澳大利亚研究理事会;

关键词：

Epitaxial growth; spinel cobalt (II; III) oxide nanoplate; wurzite ZnO nanorod; heterogeneous p-n junction; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; NANOWIRE; OXIDE; FABRICATION; TRANSITION; SHAPE; SIZE; CO;

D O I：

10.1021/nl202963z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spine] structure in a low-temperature solution process was introduced, and its capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co3O4) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 300 rotated lattice orientation of Co3O4 nanoplates from the orientation of beta-Co(OH)(2) nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co3O4 were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co3O4 nanoplates were experimentally obtained. Using this epitaxial p-n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10(4), respectively.

引用

页码：68 / 76

页数：9

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