A fully integrated 7-18 GHz Power Amplifier with on-chip output balun in 75 GHz-fT SiGe-Bipolar

被引：0
|
作者：
Bakalski, W [1 ]
Vasylyev, A [1 ]
Simbürger, W [1 ]
Thüringer, R [1 ]
Wohlrnuth, HD [1 ]
Scholtz, AL [1 ]
Weger, P [1 ]
机构：
[1] Infineon Technol AG, D-81730 Munich, Germany
来源：
PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2003年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A fully integrated rf power amplifier for 7-18GHz with no external components was realized in a 75 GHz-f(T), 0.35 mum-SiGe-BiCMOS technology. At 17.2 GHz the push-pull amplifier with integrated output balun delivers 12dBm, 17.5 dB m at 1.2 V, 2.4 V.
引用
收藏
页码：61 / 64
页数：4
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