A fully integrated 7-18 GHz Power Amplifier with on-chip output balun in 75 GHz-fT SiGe-Bipolar

被引：0
|
作者：
Bakalski, W [1 ]
Vasylyev, A [1 ]
Simbürger, W [1 ]
Thüringer, R [1 ]
Wohlrnuth, HD [1 ]
Scholtz, AL [1 ]
Weger, P [1 ]
机构：
[1] Infineon Technol AG, D-81730 Munich, Germany
来源：
PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2003年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A fully integrated rf power amplifier for 7-18GHz with no external components was realized in a 75 GHz-f(T), 0.35 mum-SiGe-BiCMOS technology. At 17.2 GHz the push-pull amplifier with integrated output balun delivers 12dBm, 17.5 dB m at 1.2 V, 2.4 V.
引用
收藏
页码：61 / 64
页数：4
相关论文
共 49 条
  • [31] A Fully-integrated 18 GHz Class-E Power Amplifier in a 45 nm CMOS SOI Technology
    Chen, Jing-Hwa
    Helmi, Sultan R.
    Jou, Alice Yi-Szu
    Mohammadi, Saeed
    2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 247 - 250
  • [32] A 2.4GHz SiGe bipolar power amplifier with integrated diode linearizer for WLAN IEEE 802.11b/g applications
    Kim, JH
    Kim, KY
    Park, YH
    Chung, YK
    Park, CS
    2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS, 2006, : 267 - 270
  • [33] A 2.4-GHz 24-dBm SOI CMOS Power Amplifier With Fully Integrated Reconfigurable Output Matching Network
    Carrara, Francesco
    Presti, Calogero D.
    Pappalardo, Fausto
    Palmisano, Giuseppe
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (09) : 2122 - 2130
  • [34] A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe:C BiCMOS
    Eissa, Mohamed Hussein
    Kissinger, Dietmar
    2019 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2019, 62 : 82 - +
  • [35] Fully-integrated GaAsHBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications
    Hirata, M.
    Oka, T.
    Hasegawa, M.
    Amano, Y.
    Ishimaru, Y.
    Kawamura, H.
    Sakuno, K.
    ELECTRONICS LETTERS, 2006, 42 (22) : 1286 - 1287
  • [36] A broadband 240 GHz lens-integrated polarization-diversity on-chip circular slot antenna for a power source module in SiGe technology
    Grzyb, J.
    Statnikov, K.
    Sarmah, N.
    Pfeiffer, U. R.
    2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2015, : 570 - 573
  • [37] Fully Integrated 23dBm Transmit chain with on-chip Power Amplifier and Balun for 802.11a application in standard 45nm CMOS process
    Kidwai, Adil A.
    Nazimov, Anna
    Eilat, Yishai
    Degani, Ofir
    RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2009, : 243 - +
  • [38] An 18-GHz, 10.9-dBm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS
    Cao, CH
    Xu, HF
    Su, Y
    Kenneth, KO
    ESSCIRC 2005: PROCEEDINGS OF THE 31ST EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2005, : 137 - 140
  • [39] Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaNHEMTs technology
    De Meyer, Sandra
    Philippon, Audrey
    Campovecchio, Michel
    Charbonniaud, Christophe
    Piotrowicz, Stephane
    Floriot, Didier
    Quere, Raymond
    GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS, 2005, : 657 - 660
  • [40] Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaNHEMTs technology
    De Meyer, Sandra
    Philippon, Audrey
    Campovecchio, Michel
    Charbonniaud, Christophe
    Piotrowicz, Stephane
    Floriot, Didier
    Quere, Raymond
    35TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2005, : 1603 - 1606
12345