High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

被引：21
作者：
Tong, Jinchao [1 ]
Tobing, Landobasa Y. M. [1 ]
Ni, Peinan [1 ]
Zhang, Dao Hua [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore
来源：
APPLIED SURFACE SCIENCE | 2018年 / 427卷
关键词：
Middle wavelength infrared; InAsSb based photodiode; interface and surface quality; Room temperature photodetection; GAAS; DETECTOR; SURFACE; GROWTH; GASB; INSB;
D O I：
10.1016/j.apsusc.2017.08.177
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present the effect of interface quality on the performance of InAsSb based hetero n-i-p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interface quality can be improved. We also employed proper fabrication processes in device fabrication to improve surface quality. It is found that the improved interface and surface quality can reduce the noise current and enhance detection performance. A detectivity of similar to 1.5 x 10(9) cmHz(1/2)W(-1) can be achieved at room temperature, and it can be increased to similar to 4.0 x 10(9) cmHz(1/2)W(-1) at 250 K. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：605 / 608
页数：4
相关论文
共 22 条
  • [1] Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb
    Baril, Neil
    Brown, Alexander
    Maloney, Patrick
    Tidrow, Meimei
    Lubyshev, Dmitri
    Qui, Yueming
    Fastenau, Joel M.
    Liu, Amy W. K.
    Bandara, Sumith
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (12)
  • [2] Interface band gap engineering in InAsSb photodiodes
    Carras, M
    Reverchon, JL
    Marre, G
    Renard, C
    Vinter, B
    Marcadet, X
    Berger, V
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (10)
  • [3] InSbN based p-n junctions for infrared photodetection
    Chen, X. Z.
    Zhang, D. H.
    Liu, W.
    Wang, Y.
    Li, J. H.
    Wee, A. T. S.
    Ramam, A.
    [J]. ELECTRONICS LETTERS, 2010, 46 (11) : 787 - U83
  • [4] Reconstructions of the sulfur-passivated InSb (100) surface
    Ciochon, Piotr
    Olszowska, Natalia
    Wrobel, Sonia
    Kolodziej, Jacek
    [J]. APPLIED SURFACE SCIENCE, 2017, 400 : 154 - 161
  • [5] Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
    Craig, A. P.
    Marshall, A. R. J.
    Tian, Z. -B.
    Krishna, S.
    Krier, A.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (25)
  • [6] High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
    Ganjipour, Bahram
    Dey, Anil W.
    Borg, B. Mattias
    Ek, Martin
    Pistol, Mats-Erik
    Dick, Kimberly A.
    Wernersson, Lars-Erik
    Thelander, Claes
    [J]. NANO LETTERS, 2011, 11 (10) : 4222 - 4226
  • [7] ELABORATION AND CHARACTERIZATION OF INASSB GROWN ON GASB AND GAAS SUBSTRATES
    GIANI, A
    PODLECKI, J
    PASCALDELANNOY, F
    BOUGNOT, G
    GOUSKOV, L
    CATINAUD, C
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 148 (1-2) : 25 - 30
  • [8] Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices
    Hoang, A. M.
    Chen, G.
    Haddadi, A.
    Razeghi, M.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (01)
  • [9] MBE growth of room-temperature InAsSb mid-infrared detectors
    Marcadet, X
    Rakovska, A
    Prevot, I
    Glastre, G
    Vinter, B
    Berger, V
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 609 - 613
  • [10] Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers
    Mori, M
    Li, DM
    Yamazaki, M
    Tambo, T
    Ueba, H
    Tatsuyama, C
    [J]. APPLIED SURFACE SCIENCE, 1996, 104 : 563 - 569
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