Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices

被引：92
作者：
Ke, Shanming [1 ,3 ]
Chen, Chang [1 ]
Fu, Nianqing [4 ]
Zhou, Hua [1 ]
Ye, Mao [1 ]
Lin, Peng [1 ]
Yuan, Wenxiang [2 ]
Zeng, Xierong [1 ]
Chen, Lang [5 ]
Huang, Haitao [6 ,7 ]
机构：
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Chem & Environm Engn, Shenzhen 518060, Peoples R China
[3] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
[4] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
[5] South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
[6] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[7] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 42期
关键词：
flexible electronics; mica; transparent heaters; flexible perovskite solar cells; high temperature process; PEROVSKITE SOLAR-CELLS; EPITAXIAL-GROWTH; ULTRA-THIN; FILM; HEATERS; ZNO; VAN; EFFICIENCY; SUBSTRATE; LAYERS;
D O I：
10.1021/acsami.6b09166
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Sn-doped In2O3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 degrees C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 degrees C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 degrees C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.
引用
收藏
页码：28406 / 28411
页数：6
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