Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

被引：85

作者：

Deal, William. R. ^{[1
]}

Leong, K. ^{[1
]}

Radisic, V. ^{[1
]}

Sarkozy, S. ^{[1
]}

Gorospe, B. ^{[1
]}

Lee, J. ^{[1
]}

Liu, P. H. ^{[1
]}

Yoshida, W. ^{[1
]}

Zhou, J. ^{[1
]}

Lange, M. ^{[1
]}

Lai, R. ^{[1
]}

Mei, X. B. ^{[1
]}

机构：

[1] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 07期

关键词：

Coplanar waveguide (CPW); high electron mobility transistor (HEMT); low noise amplifier (LNA); millimeter-wave (MM-Wave); monolithic microwave integrated circuit (MMIC); sub-millimeter wave;

D O I：

10.1109/LMWC.2011.2143701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high f(MAX) InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.

引用

页码：368 / 370

页数：3

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