Formation Mechanism of Secondary Electron Contrast of Graphene Layers on a Metal Substrate

被引：21

作者：

Shihommatsu, Kota ^{[1
]}

Takahashi, Junro ^{[1
,2
]}

Momiuchi, Yuta ^{[1
,3
]}

Hoshi, Yudai ^{[1
,4
]}

Kato, Hiroki ^{[1
,5
]}

Homma, Yoshikazu ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, 1-3 Kagurazaka, Tokyo 1628601, Japan

[2] Nippon Steel & Sumikin Technol, Amagasaki Unit, Phys & Chem Anal Div, 1-8 Fuso Cho, Amagasaki, Hyogo 6600891, Japan

[3] Sony Semicond Solut Corp, Mobile Imaging Syst Business Div, 4-14-1 Asahi Cho, Atsugi, Kanagawa 2430014, Japan

[4] Citizen Watch Co Ltd, Dev Div, Res & Dev Ctr, 840 Shimotomi, Tokorozawa, Saitama 3598511, Japan

[5] JEOL Ltd, IB Business Unit, 3-1-2 Musashino, Akishima, Tokyo 1968558, Japan

来源：

ACS OMEGA | 2017年 / 2卷 / 11期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SURFACE; CARBON; GROWTH; COPPER; EELS;

D O I：

10.1021/acsomega.7b01550

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Scanning electron microscopy (SEM) is widely used to observe graphene on metal substrates. However, the origin of the SEM image contrast of graphene is not well understood. In this work, we performed in situ SEM imaging of layer-number-controlled graphene on a Ni substrate using a high-pass energy filter for secondary electrons. We found that the graphene layer contrast was maximized at 15-20 eV, corresponding to the pi-sigma* interband transition in graphene. Our results indicate that the SEM image of graphene is produced by attenuation of the electrons emitted from the metal substrate by the monoatomic layers of graphene.

引用

页码：7831 / 7836

页数：6

共 27 条

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