Quantum Hall effect in graphene with interface-induced spin-orbit coupling

被引：28

作者：

Cysne, Tarik P. ^{[1
]}

Garcia, Jose H. ^{[2
,3
]}

Rocha, Alexandre R. ^{[4
]}

Rappoport, Tatiana G. ^{[1
]}

机构：

[1] Univ Fed Rio de Janeiro, Inst Fis, Caixa Postal 68528, BR-21941972 Rio De Janeiro, RJ, Brazil

[2] CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Barcelona 08193, Spain

[3] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain

[4] Univ Estadual Paulista, Inst Fis Teor, Rua Dr Bento T Ferraz 271, BR-01140070 Sao Paulo, Brazil

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 08期

关键词：

Calculations - Genetic algorithms - Crystal symmetry - Graphene - Hamiltonians - Quantum theory - Molecular physics - Spin Hall effect - Quantum chemistry;

D O I：

10.1103/PhysRevB.97.085413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

引用

页数：9

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