Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52, Ti0.48)O3 thin films

被引：78

作者：

Nguyen, Minh D. ^{[1
,2
,3
]}

Dekkers, Matthijn ^{[1
,2
]}

Houwman, Evert ^{[1
]}

Steenwelle, Ruud ^{[1
]}

Wan, Xin ^{[1
]}

Roelofs, Andreas ^{[4
]}

Schmitz-Kempen, Thorsten ^{[4
]}

Rijnders, Guus ^{[1
]}

机构：

[1] Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] SolMateS BV, NL-7522 NB Enschede, Netherlands

[3] Hanoi Univ Sci & Technol, Int Training Inst Mat Sci, Hanoi, Vietnam

[4] AixACCT Syst GmbH, D-52068 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

D O I：

10.1063/1.3669527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O-3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O-3 thin films strained by the substrate always show rotation of the polarization vector. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669527]

引用

页数：4

共 12 条

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