Infrared semiconductor lasers for sensing and diagnostics

被引：35
作者：
Wagner, J [1 ]
Mann, C [1 ]
Rattunde, M [1 ]
Weimann, G [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 78卷 / 04期
关键词：
D O I：
10.1007/s00339-003-2411-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
There is an increasing demand for spectrally agile compact solid-state lasers for spectroscopic sensing and diagnostics. This demand can be met by III-V semiconductor-based lasers employing various design concepts for the active region. These concepts include, apart from the classical type-I interband diode laser, the type-II W-laser and the unipolar quantum cascade laser. Representative device data will be presented for these three types of lasers in conjunction with a discussion of the relative merits of the different active-region concepts.
引用
收藏
页码：505 / 512
页数：8
相关论文
共 70 条
  • [11] GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power
    Choi, HK
    Walpole, JN
    Turner, GW
    Connors, MK
    Missaggia, LJ
    Manfra, MJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (07) : 938 - 940
  • [12] Far-infrared surface-plasmon quantum-cascade lasers at 21.5 μm and 24 μm wavelengths
    Colombelli, R
    Capasso, F
    Gmachl, C
    Hutchinson, AL
    Sivco, DL
    Tredicucci, A
    Wanke, MC
    Sergent, AM
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2620 - 2622
  • [13] INASSB/ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 4 MU-M
    EGLASH, SJ
    CHOI, HK
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (07) : 833 - 835
  • [14] EFFICIENT GAINASSB/ALGAASSB DIODE-LASERS EMITTING AT 2.29-MU-M
    EGLASH, SJ
    CHOI, HK
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (13) : 1292 - 1294
  • [15] Bound-to-continuum and two-phonon resonance quantum-cascade lasers for high duty cycle, high-temperature operation
    Faist, J
    Hofstetter, D
    Beck, M
    Aellen, T
    Rochat, M
    Blaser, S
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (06) : 533 - 546
  • [16] QUANTUM CASCADE LASER
    FAIST, J
    CAPASSO, F
    SIVCO, DL
    SIRTORI, C
    HUTCHINSON, AL
    CHO, AY
    [J]. SCIENCE, 1994, 264 (5158) : 553 - 556
  • [17] High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature
    Faist, J
    Capasso, F
    Sirtori, C
    Sivco, DL
    Baillargeon, JN
    Hutchinson, AL
    Chu, SNG
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3680 - 3682
  • [18] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
    Faist, J
    Capasso, F
    Sivco, DL
    Hutchinson, AL
    Chu, SNG
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 680 - 682
  • [19] Continuous-wave type-II "W" lasers emitting at λ=5.4-7.1 μm
    Felix, CL
    Bewley, WW
    Olafsen, LJ
    Stokes, DW
    Aifer, EH
    Vurgaftman, I
    Meyer, JR
    Yang, MJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) : 964 - 966
  • [20] High-efficiency midinfrared "W" laser with optical pumping injection cavity
    Felix, CL
    Bewley, WW
    Vurgaftman, I
    Olafsen, LJ
    Stokes, DW
    Meyer, JR
    Yang, MJ
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2876 - 2878
1234567