Infrared semiconductor lasers for sensing and diagnostics

被引：36

作者：

Wagner, J ^{[1
]}

Mann, C ^{[1
]}

Rattunde, M ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 78卷 / 04期

关键词：

D O I：

10.1007/s00339-003-2411-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

There is an increasing demand for spectrally agile compact solid-state lasers for spectroscopic sensing and diagnostics. This demand can be met by III-V semiconductor-based lasers employing various design concepts for the active region. These concepts include, apart from the classical type-I interband diode laser, the type-II W-laser and the unipolar quantum cascade laser. Representative device data will be presented for these three types of lasers in conjunction with a discussion of the relative merits of the different active-region concepts.

引用

页码：505 / 512

页数：8

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