Infrared semiconductor lasers for sensing and diagnostics

被引：35
作者：
Wagner, J [1 ]
Mann, C [1 ]
Rattunde, M [1 ]
Weimann, G [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 78卷 / 04期
关键词：
D O I：
10.1007/s00339-003-2411-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
There is an increasing demand for spectrally agile compact solid-state lasers for spectroscopic sensing and diagnostics. This demand can be met by III-V semiconductor-based lasers employing various design concepts for the active region. These concepts include, apart from the classical type-I interband diode laser, the type-II W-laser and the unipolar quantum cascade laser. Representative device data will be presented for these three types of lasers in conjunction with a discussion of the relative merits of the different active-region concepts.
引用
收藏
页码：505 / 512
页数：8
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