Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology

被引：1

作者：

Kotera, N ^{[1
]}

Arimoto, H ^{[1
]}

Miura, N ^{[1
]}

Jones, ED ^{[1
]}

Tanaka, K ^{[1
]}

Mishima, T ^{[1
]}

Washima, M ^{[1
]}

机构：

[1] Kyushu Inst Technol, Iizuka, Fukuoka 8208502, Japan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

infrared; far infrared; cyclotron resonance; effective mass; quantum well;

D O I：

10.1117/12.311004

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Conduction-band effective masses in a direction parallel to the quantum well plane mere investigated in n-type-modulation-doped InGaAs/InAlAs multi-quantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 x 10(12) cm(-2) per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses: almost 50%-bigger than the band edge mass of 0.041m(0), mere measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction band in a direction perpendicular to the same quantum well and from that of GaAs/GaAlAs quantum well system.

引用

页码：151 / 158

页数：8