Five-second coherence of a single spin with single-shot readout in silicon carbide

被引:99
作者
Anderson, Christopher P. [1 ,2 ]
Glen, Elena O. [1 ]
Zeledon, Cyrus [1 ]
Bourassa, Alexandre [1 ]
Jin, Yu [3 ]
Zhu, Yizhi [1 ]
Vorwerk, Christian [1 ]
Crook, Alexander L. [1 ,2 ]
Abe, Hiroshi [4 ]
Ul-Hassan, Jawad [5 ]
Ohshima, Takeshi [4 ]
Son, Nguyen T. [5 ]
Galli, Giulia [1 ,3 ,6 ]
Awschalom, David D. [1 ,2 ,6 ]
机构
[1] Univ Chicago, Pritzker Sch Mol Engn, Chicago, IL 60637 USA
[2] Univ Chicago, Dept Phys, Chicago, IL 60637 USA
[3] Univ Chicago, Dept Chem, Chicago, IL 60637 USA
[4] Natl Inst Quantum Sci & Technol, 1233 Watanuki, Takasaki, Gumma 3701292, Japan
[5] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[6] Argonne Natl Lab, Ctr Mol Engn & Mat Sci Div, Lemont, IL 60439 USA
基金
瑞典研究理事会;
关键词
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I
10.1126/sciadv.abm5912
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or postselection, resulting in a high signal-to-noise ratio that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single-spin T-2 > 5 seconds, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.
引用
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页数:9
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