Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer

被引：24

作者：

Xing, Zhong-Qiu ^{[1
,2
,3
]}

Zhou, Yong-Jie ^{[4
]}

Liu, Yu-Huai ^{[1
,2
,3
]}

Wang, Fang ^{[1
,2
,3
]}

机构：

[1] Zhengzhou Univ, Natl Joint Res Ctr Elect Mat & Syst, Zhengzhou 450001, Peoples R China

[2] Zhengzhou Univ, Int Joint Lab Electron Mat & Syst, Zhengzhou 450001, Peoples R China

[3] Zhengzhou Univ, Sch Informat Engn, Zhengzhou 450001, Peoples R China

[4] Xinyang Normal Univ, Sch Phys & Elect Engn, Xinyang 464000, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 02期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; INGAN; POLARIZATION; IMPROVEMENT; ADVANTAGE;

D O I：

10.1088/0256-307X/37/2/027302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers, an inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural electron blocking layers of rectangular, trapezoidal and inverse-trapezoidal structures are established. The energy band, electron concentration, electron current density, P-I and V-I characteristics, and the photoelectric conversion efficiency of different structural devices are investigated by simulation. The results show that the optical and electrical properties of the inverse-trapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures, owing to the effectively suppressed electron leakage.

引用

页数：5

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