Quantum dots in quantum well structures

被引：10
作者：
Bryant, GW
机构：
[1] Natl. Inst. of Std. and Technology, Gaithersburg
来源：
JOURNAL OF LUMINESCENCE | 1996年 / 70卷
关键词：
quantum dots; quantum wells; strain; energy levels;
D O I：
10.1016/0022-2313(96)00048-8
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Recent progress toward fabricating and characterizing quantum dots in III-V quantum well structures is reviewed. Quantum dots made by use of lithography and etching, including deep-etched, barrier-modulated, strain-induced and interdiffused quantum dots, are described. Quantum dots fabricated by growth, including natural quantum dots, dots on patterned substrates, and self-assembled dots, are discussed. Dot sizes and uniformity, energy-level splittings, and luminescence efficiencies that are now being achieved are discussed. The status of key issues, such as the energy relaxation in quantum dots, is mentioned.
引用
收藏
页码：108 / 119
页数：12
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