Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer

被引：14

作者：

Kim, Woong-Sun ^{[1
]}

Moon, Yeon-Keon ^{[1
]}

Kim, Kyung-Taek ^{[1
]}

Shin, Sae-Young ^{[1
]}

Park, Jong-Wan ^{[1
]}

机构：

[1] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Oxide semiconductors; Thin film transistors; Zinc oxide; Oxide interlayer; Gate insulator; Plasma treatment; Negative bias temperature instability (NBTI); Silicon dioxide; ATOMIC LAYER DEPOSITION; TRANSPARENT; UNIFORMITY;

D O I：

10.1016/j.tsf.2011.07.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance of ZnO thin film transistors (TFT) subjected to SiO2 interlayer treatments on Si3N4 insulators was investigated. In the case of a SiO2 interlayer of 10 nm on Si3N4 insulator, a drastic improvement in device performance was obtained. ZnO TFT with this interlayer showed reduced trap density between the Si3N4 and ZnO channel, bringing remarkable improvement in bias stability characteristics. These devices show good performance and exhibit a high field-effect mobility of 6.41 cm(2)/Vs, an on/off current ratio of 10(8), and a subthreshold swing of 1.46 V/decade. Also, the turn-on voltage shifted from -2 V to -6 V with negligible changes in the subthreshold swing and field effect mobility after total stress time. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：578 / 581

页数：4

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