Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

被引：20

作者：

Samsonenko, Yu. B. ^{[1
,2
,3
]}

Cirlin, G. E. ^{[1
,2
,3
]}

Khrebtov, A. I. ^{[2
]}

Bouravleuv, A. D. ^{[2
,3
]}

Polyakov, N. K. ^{[1
,2
,3
]}

Ulin, V. P. ^{[3
]}

Dubrovskii, V. G. ^{[2
,3
]}

Werner, P. ^{[4
]}

机构：

[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[2] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Max Planck Gesell Mikrostrukturphys, D-06120 Halle, Saale, Germany

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

NANOWHISKERS; MECHANISM;

D O I：

10.1134/S1063782611040191

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630A degrees C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610A degrees C. An increase in the temperature to 640A degrees C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented.

引用

页码：431 / 435

页数：5

共 16 条

[1] Optical properties of InP nanowires on Si substrates with varied synthesis parameters [J].

Chuang, Linus C. ;

Moewe, Michael ;

Crankshaw, Shanna ;

Chang-Hasnain, Connie .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[2] Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy [J].

Cirlin, G. E. ;

Dubrovskii, V. G. ;

Samsonenko, Yu. B. ;

Bouravleuv, A. D. ;

Durose, K. ;

Proskuryakov, Y. Y. ;

Mendes, Budhikar ;

Bowen, L. ;

Kaliteevski, M. A. ;

Abram, R. A. ;

Zeze, Dagou .

PHYSICAL REVIEW B, 2010, 82 (03)

[3] Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates [J].

Cirlin, G. E. ;

Dubrovskii, V. G. ;

Soshnikov, I. P. ;

Sibirev, N. V. ;

Samsonenko, Yu. B. ;

Bouravleuv, A. D. ;

Harmand, J. C. ;

Glas, F. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04) :112-114

[4] Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb [J].

Cirlin, GE ;

Dubrovskii, VG ;

Tonkikh, AA ;

Sibirev, NV ;

Ustinov, VM ;

Werner, P .

SEMICONDUCTORS, 2005, 39 (05) :547-551

[5] Semiconductor nanowhiskers: Synthesis, properties, and applications [J].

Dubrovskii, V. G. ;

Cirlin, G. E. ;

Ustinov, V. M. .

SEMICONDUCTORS, 2009, 43 (12) :1539-1584

[6] Growth kinetics and crystal structure of semiconductor nanowires [J].

Dubrovskii, V. G. ;

Sibirev, N. V. ;

Harmand, J. C. ;

Glas, F. .

PHYSICAL REVIEW B, 2008, 78 (23)

[7] Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment [J].

Dubrovskii, VG ;

Cirlin, GE ;

Soshnikov, IP ;

Tonkikh, AA ;

Sibirev, NV ;

Samsonenko, YB ;

Ustinov, VM .

PHYSICAL REVIEW B, 2005, 71 (20)

[8]

GLAS F, 2006, PHYS REV, V74, P121

[9] Why does wurtzite form in nanowires of III-V zinc blende semiconductors? [J].

Glas, Frank ;

Harmand, Jean-Christophe ;

Patriarche, Gilles .

PHYSICAL REVIEW LETTERS, 2007, 99 (14)

[10] Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth -: art. no. 203101 [J].

Harmand, JC ;

Patriarche, G ;

Péré-Laperne, N ;

Mérat-Combes, MN ;

Travers, L ;

Glas, F .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

← 1 2 →