N-type PTCDI-C13H27 thin-film transistors deposited at different substrate temperature

被引：28

作者：

Puigdollers, J. ^{[1
]}

Della Pirriera, M. ^{[1
]}

Marsal, A. ^{[1
]}

Orpella, A. ^{[1
]}

Cheylan, S. ^{[2
]}

Voz, C. ^{[1
]}

Alcubilla, R. ^{[1
]}

机构：

[1] Univ Politecn Cataluna, Micro & Nanotechnol Grp, Dept Elect Engn, Barcelona, Spain

[2] ICFO, Inst Photon Sci, Castelldefels, Spain

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 23期

关键词：

PTCDI-C13H27; Thin-film transistors; DOS; SEMICONDUCTORS;

D O I：

10.1016/j.tsf.2009.02.113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 degrees C with a field-effect mobility of 0.12 cm(2)/V.s and threshold voltage around 46 V. In this work, the microstructure of the films is correlated with the device performance. In particular, the dependence of the activation energy for the channel conductance on gate voltages has been related to the properties of the layers. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6271 / 6274

页数：4

共 7 条

[1] Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors [J].

Chesterfield, RJ ;

McKeen, JC ;

Newman, CR ;

Frisbie, CD ;

Ewbank, PC ;

Mann, KR ;

Miller, LL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6396-6405

[2] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[3]

Globus T., 1994, MAT RES SOC P, V336, P883

[4] High mobility n-channel organic thin-film transistors and complementary inverters -: art. no. 064502 [J].

Gundlach, DJ ;

Pernstich, KP ;

Wilckens, G ;

Grüter, M ;

Haas, S ;

Batlogg, B .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)

[5] High-mobility polymer gate dielectric pentacene thin film transistors [J].

Klauk, H ;

Halik, M ;

Zschieschang, U ;

Schmid, G ;

Radlik, W ;

Weber, W .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5259-5263

[6] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS [J].

POWELL, MJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :93-103

[7] High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments [J].

Tatemichi, Shuhei ;

Ichikawa, Musubu ;

Koyama, Toshiki ;

Taniguchi, Yoshio .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

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