Influence of thin metal base thickness on the performance of CuPc vertical organic triodes

被引:17
作者
Cheng, Shiau-Shin [1 ]
Yang, Chuan-Yi
Chuang, You-Che
Ou, Chun-Wei
Wu, Meng-Chyi
Lin, Shih-Yen
Chan, Yi-Jen
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[4] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan
关键词
TRANSISTOR; DISPLAYS; DRIVEN;
D O I
10.1063/1.2722623
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, the characteristics of vertical organic triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5 nm thick Al base reaches 1.9 at V-CE=-6 V and J(B)=2.5 mA/cm(2). (c) 2007 American Institute of Physics.
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页数:3
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