Characterization of GaN films grown on silicon (111) substrates

被引：15
作者：
Yang, YG
Ma, HL
Xue, CS
Hao, XT
Zhuang, HZ
Ma, J
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 325卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
GaN films; photoluminescence; Si (111) substrates; annealing; RF magnetron sputtering;
D O I：
10.1016/S0921-4526(02)01529-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
High-quality gallium Nitride (GaN) films were prepared by reactive annealing sputtered gallium oxide (Ga2O3) films on Si (1 1 1) substrates in flowing ammonia. X-ray diffraction, X-ray photoelectron spectroscopy, and the selected area electron diffraction patterns reveal that the films consist of hexagonal wurtzite GaN with c-axis orientated polycrystalline grains. Intense room-temperature photo luminescence peaked at 354 nm of the films is observed. The band gap of these films has a blueshift with respect to bulk GaN. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：230 / 234
页数：5
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