Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

被引：34

作者：

Cao, XA

LeBoeuf, SF

Kim, KH

Sandvik, PM

Stokes, EB

Ebong, A

Walker, D

Kretchmer, J

Lin, JY

Jiang, HX

机构：

[1] GE Co, Res Ctr, Niskayuna, NY 12309 USA

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期

关键词：

light-emitting diode; GaN; radiative tunneling; nonradiative recombination;

D O I：

10.1016/S0038-1101(02)00190-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanisms of carrier injection and recombination in a GaN/InGaN single quantum well light-emitting diodes have been studied. Strong defect-assisted tunneling behavior has been observed in both forward and reverse current-voltage characteristics. In addition to band-edge emission at 400 nm, the electroluminescence has also been attributed to radiative tunneling from band-to-deep level states and band-to-band tail states. The approximately current-squared dependence of light intensity at 400 nm even at high currents indicates dominant nonradiative recombination through deep-lying states within the space-charge region. Inhomogeneous avalanche breakdown luminescence, which is primarily caused by deep-level recombination, suggests a nonuniform spatial distribution of reverse leakage in these diodes. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2291 / 2294

页数：4

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