Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface

被引：3

作者：

Nawa, Kenji ^{[1
,2
]}

Kepaptsoglou, Demie ^{[3
,4
]}

Ghasemi, Arsham ^{[3
]}

Hasnip, Philip ^{[3
]}

Barcena-Gonzalez, Guillermo ^{[5
]}

Nicotra, Giuseppe ^{[6
]}

Galindo, Pedro L. ^{[5
]}

Ramasse, Quentin M. ^{[4
,7
,8
]}

Nakamura, Kohji ^{[2
]}

Speller, Susannah C. ^{[9
]}

Kuerbanjiang, Balati ^{[10
]}

Hesjedal, Thorsten ^{[10
]}

Lazarov, Vlado K. ^{[3
]}

机构：

[1] Natl Inst Mat Sci NIMS, Res Ctr Magnet & Spintron Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[2] Mie Univ, Dept Phys Engn, 1577 Kurima Machiya, Tsu, Mie 5148507, Japan

[3] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[4] SuperSTEM Lab, SciTech Daresbury Campus, Daresbury WA4 4AD, Cheshire, England

[5] Univ Cadiz, Dept Comp Engn, ESI, Puerto Real 11510, Spain

[6] CNR IMM, Str 8,5, I-95121 Catania, Italy

[7] Univ Leeds, Sch Chem & Proc Engn, Leeds LS2 9JT, W Yorkshire, England

[8] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, W Yorkshire, England

[9] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[10] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

来源：

PHYSICAL REVIEW MATERIALS | 2021年 / 5卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; EPITAXIAL-GROWTH; BI2SE3; STRAIN;

D O I：

10.1103/PhysRevMaterials.5.024203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge.

引用

页数：8

共 36 条

[1] Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111) [J].

Bonell, Frederic ;

Cuxart, Marc G. ;

Song, Kenan ;

Robles, Roberto ;

Ordejon, Pablo ;

Roche, Stephan ;

Mugarza, Aitor ;

Valenzuela, Sergio O. .

CRYSTAL GROWTH & DESIGN, 2017, 17 (09) :4655-4660

[2] EELS in the STEM: Determination of materials properties on the atomic scale [J].

Browning, ND ;

Wallis, DJ ;

Nellist, PD ;

Pennycook, SJ .

MICRON, 1997, 28 (05) :333-348

[3] Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator [J].

Chang, Cui-Zu ;

Zhang, Jinsong ;

Feng, Xiao ;

Shen, Jie ;

Zhang, Zuocheng ;

Guo, Minghua ;

Li, Kang ;

Ou, Yunbo ;

Wei, Pang ;

Wang, Li-Li ;

Ji, Zhong-Qing ;

Feng, Yang ;

Ji, Shuaihua ;

Chen, Xi ;

Jia, Jinfeng ;

Dai, Xi ;

Fang, Zhong ;

Zhang, Shou-Cheng ;

He, Ke ;

Wang, Yayu ;

Lu, Li ;

Ma, Xu-Cun ;

Xue, Qi-Kun .

SCIENCE, 2013, 340 (6129) :167-170

[4] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[5] Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces [J].

Chen, Zhiyi ;

Garcia, Thor Axtmann ;

De Jesus, Joel ;

Zhao, Lukas ;

Deng, Haiming ;

Secor, Jeff ;

Begliarbekov, Milan ;

Krusin-Elbaum, Lia ;

Tamargo, Maria C. .

JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (04) :909-913

[6] Antisite defects of Bi2Te3 thin films [J].

Cho, SL ;

Kim, Y ;

DiVenere, A ;

Wong, GK ;

Ketterson, JB ;

Meyer, JR .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1401-1403

[7]

de la Pena F, **DATA OBJECT**, DOI [10.5281/zenodo.3396791, DOI 10.5281/ZENODO.3396791]

[8] Low-temperature Raman fingerprints for few-quintuple layer topological insulator Bi2Se3 films epitaxied on GaAs [J].

Eddrief, Mahmoud ;

Atkinson, Paola ;

Etgens, Victor ;

Jusserand, Bernard .

NANOTECHNOLOGY, 2014, 25 (24)

[9] Probing Neutral Majorana Fermion Edge Modes with Charge Transport [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW LETTERS, 2009, 102 (21)

[10] The Peak Pairs algorithm for strain mapping from HRTEM images [J].

Galindo, Pedro L. ;

Kret, Slawomir ;

Sanchez, Ana M. ;

Laval, Jean-Yves ;

Yanez, Andres ;

Pizarro, Joaquin ;

Guerrero, Elisa ;

Ben, Teresa ;

Molina, Sergio I. .

ULTRAMICROSCOPY, 2007, 107 (12) :1186-1193

← 1 2 3 4 →