Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices

被引：4
作者：
David, J. [1 ]
Rossella, F. [2 ,3 ]
Rocci, M. [2 ,3 ]
Ercolani, D. [2 ,3 ]
Sorba, L. [2 ,3 ]
Beltram, F. [2 ,3 ]
Gemmi, M. [1 ]
Roddaro, S. [2 ,3 ]
机构：
[1] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[2] Scuola Normale Super Pisa, NEST, Piazza S Silvestro 12, I-56127 Pisa, Italy
[3] CNR, Ist Nanosci, Piazza S Silvestro 12, I-56127 Pisa, Italy
来源：
NANO LETTERS | 2017年 / 17卷 / 04期
关键词：
Electron diffraction tomography; transmission electron microscopy; hybrid metal-semiconductor nanowires; thermal annealing; GaAs nanowires; AUTOMATED DIFFRACTION TOMOGRAPHY; INITIO STRUCTURE DETERMINATION; INTERFACIAL REACTIONS; ELECTRON-DIFFRACTION; HETEROSTRUCTURES; MODULATION; FILMS;
D O I：
10.1021/acs.nanolett.6b05223
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed.
引用
收藏
页码：2336 / 2341
页数：6
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